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Paper   IPM / P / 8686
School of Physics
  Title:   Co-Deposition Process of RF-Sputtering and RF-PECVD of Copper/Carbon Nanocomposite Films
1.  T. Ghodselahi
2.  M.A. Vesaghi
3.  A. Shafiekhani
4.  A. Baradaran
5.  A. Karimi
6.  Z. Mobini
  Status:   Published
  Journal: Surf & Coat Tech
  Vol.:  202
  Year:  2008
  Pages:   2731-2736
  Supported by:  IPM
Nanoparticle copper/carbon composite films were prepared by Co-deposition of RFSputtering and RF-PECVD method from acetylene gas and copper target. We investigate deposition process in the region where by changing pressure, the process converts to physical sputtering mode in constant power regime and at a critical pressure between 1.5 to 3 Pa. The estimated value of mean ion energy at this critical point of pressure is close to threshold energy of physical sputtering of copper atoms by acetylene ions. By utilizing this property and by setting initial pressure from 1.3 to 6.6 Pa, nanoparticles copper/carbon composite films were grown with different copper content. The Copper content of our films was obtained by Rutherford Back Scattering (RBS) and it varied from

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