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Paper   IPM / P / 15066
School of Physics
  Title:   Charge transport in doped zigzag phosphorene nanoribbons
  Author(s): 
1.  Z. Nourbakhsh
2.  R. Asgari
  Status:   Published
  Journal: Phys. Rev. B
  Vol.:  97
  Year:  2018
  Pages:   235406
  Supported by:  IPM
  Abstract:
The effects of lattice distortion and chemical disorder on charge transport properties of two-terminal zigzag phosphorene nanoribbons (zPNRs) which shows a resonant tunneling behavior under an electrical applied bias are studied. Our comprehensive study is based on an ab initio quantum transport calculations on the basis of the Landauer theory. We use nitrogen and silicon substitutional dopant atoms, and thus employ different physical quantities such as IV curve, voltage drop behavior, transmission spectrum, transmission pathway, and atomic current, to explore the transport mechanism of zPNR devices under a bias voltage. The calculated transmission pathways show the transition from a ballistic transport regime to a diffusive and in some particular cases to localized transport regimes. Current flowing via the chemical bonds and hopping are monitored, however, the conductance originates mainly from a charge traveling through the chemical bonds in the vicinity of the zigzag edges. Our results show that, in doped systems, the device conductance decreases, and in particular negative differential resistance becomes weak or eliminates. Besides, the conductance in a pure zPNR system is almost independent of the ribbon width.

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